Electron mobility in (100) homoepitaxial layers of phosphorus-doped diamond

Abstract

The electron transport in n-type diamond is investigated using a series of (100) homoepitaxial layers doped with phosphorus in the range of 1016–1018 cm−3. The electrical properties of the n-type layers, such as electron concentration and mobility, were measured using the resistivity and Hall effect as a function of temperature. The scattering of electrons in the diamond was modeled for the (100) orientation, which is preferred for electronic device applications. The physical parameters extracted from the fitting of the experimental data allow us to discuss the upper limit for the electron mobility in (100) n-type diamond.