Abstract
In this paper, we present a study of the effect of temperature on the two-dimensional electron mobility, Hall scattering factor, and sheet conductivity, using a fully numerical calculation in unintentionally doped AlxGa1−xN/AlN/GaN heterostructures. The analysis of our results clearly indicates that the effect of partial sub-band occupancy is considerable, especially at higher operating temperatures when more than one sub-band is occupied. The comparison of our calculated results with published experimental data is shown to be in good agreement.
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