Abstract

We report Far Infrared cyclotron resonance experiments in the high mobility two-dimensional electron gas occuring in modulation doped Al xGa 1−xAs-GaAs heterojunctions. Our data extend over a wide range of temperatures and resonance magnetic fields. The width of the cyclotron resonance line depends strongly on the resonance magnetic field, and the data are interpreted in the framework of Ando and Uemura's theory. We have also investigated the temperature dependence of the linewidth, which is found to behave like the reciprocal Hall mobility.

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