Abstract
Theoretical and experimental studies of electron mobility and compensation ratio in n-type InP are reported. From far-infrared magnetoabsorption measurements, compensation ratios of nine epitaxial samples are determined experimentally. Electron mobility is calculated by considering all essential scattering processes and by taking into account the compensation effect. By comparing the theoretical results with the experiments, it is found that the appropriate deformation potential and piezoelectric constant values for InP are 6.5 eV and 0.01, respectively. A new electron mobility and carrier concentration relationship, which can be used to determine the compensation ratio of high-purity n-type InP, is proposed.
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