Abstract
ZnS crystals grown form the vapor phase and ZnS/(001)GaAs epitaxial structures grown by metalorganic vapor phase epitaxy are studied by transmission electron microscopy after in situ irradiation in an electron microscope at an electron energy of 400 keV and intensity of (1–4) × 1019 electrons/cm2 s. It is shown that irradiation leads to the formation of small (2.5–45 nm) dislocation loops with a density of 1.4 × 1011 cm–2, as well as voids and new phase inclusions ≤10 nm in size. Using the moire fringe contrast analysis, these inclusions were identified as ZnO and ZnO2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
