Abstract
Single-pass friction tests of single crystals of SiC on the basal (0001) plane in air at ambient temperature and pressure in the load range 0.1–1 kgf were undertaken. The topography and subsurface areas in the vicinity of the track were examined by scanning electron microscopy and transmission electron microscopy. Slip systems of the types {0001} 〈21̄1̄0〉 and {h0 h ̄ 1} 〈21̄1̄0〉 dominate the deformation, whereas cleavage planes of the types {0001}, {101̄0} and {112̄0} control the fracture processes.
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