Abstract
ErSi 2− x -films ( x=0.1–0.3) grown by co-evaporation at different deposition ratios have been characterised by transmission electron microscopy, electron diffraction and high resolution electron microscopy. A very good epitaxial growth relation with the Si-substrate was deduced for all samples and observed phases. Different defect modulated structures are formed. They can be described as structural variants (orthorhombic or rhombohedral) of the basic structure. The modulated phases are related to deviations from stoichiometry similar to crystallographic shear structures. The ErSi 1.9 material contains Si precipitates, illustrating the preference for the ErSi 1.7 composition to be maintained.
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