Abstract
Transmission electron microscopy (TEM), optical absorption and photo-luminescence spectroscopy were utilized to characterize the damage structure in 200 keV Xe +-implanted yttria-stabilized zirconia (YSZ). The implantation was conducted at room temperature up to a fluence of 1 × 10 17 Xe +/cm 2. TEM analysis showed that the density of defect clusters increased with increasing ion fluence. Small bubbles (3–5 nm in diameter) precipitated in the sample at a fluence of 1 × 10 17 Xe +/cm 2. No amorphization was observed. A broad absorption band centered at 522 or 497 nm was observed in the optical absorption spectra of samples implanted with 1 × 10 16 Xe +/cm 2 and 1 × 10 17 Xe +/cm 2, respectively. The band may be associated with the combination of electrons trapped at oxygen vacancies and oxygen ions with trapped holes. Luminescence measurements of the YSZ crystal implanted with 1 × 10 16 Xe +/cm 2 show that Xe +-implantation did not produce other optically active defects.
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