Abstract
The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200 nm thickness on a sapphire (0001) substrate by metal–organic vapor phase epitaxy. The AlN template was annealed under (N2 + CO) atmosphere at 1500–1650 °C. TEM characterization was conducted to investigate the microstructural evolution, revealing that the postannealed AlN has a two-layer structure, the upper and lower layers of which exhibit Al and N polarities, respectively. It has been confirmed that postannealing is an effective treatment for controlling the microstructure.
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