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Abstract
AbstractCobalt films are sputter deposited on Si0.8Ge0.2 layers grown epitaxially on Si substrates. Compared with the silicidation on pure silicon, there is a retardation of the disilicide formation in the SiGe case. The conversion of the monosilicide into the disilicide strongly depends on the thickness of the initial SiGe layers. For the silicidation of titanium on poly-SiGe layers, the increase of the Ge content favours the nucleation of C54 titanium germanosilicide, hence helping the transition from the C49 to the C54 phase on the blanket layers. The thickness of the final C54 Ti-germanosilicide layers formed on narrow poly-Sil-×Gex runners is independent of the line width and the Ge concentration.
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