Abstract
Microcrystalline silicon (μc-Si) thin films were deposited by electron cyclotron resonance-chemical vapor deposition (ECR-CVD) on single crystal silicon (c-Si) and glass substrates at temperatures of 325 and 465 °C. The films and the interfaces were characterized by scanning and transmission electron microscopy (SEM, TEM). On c-Si substrates local initial epitaxial growth was observed, on glass substrates an amorphous interlayer is found for films deposited at 325 °C. It is shown that using this deposition technique and proper choice of the deposition parameters (high substrate temperature, low deposition rate) the initial growth of an amorphous film can be avoided.
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