Abstract
In the first part of the experiment, the deposition rate, r (A/min), was changed systematically from about 10 A/min to 10 4 A/min. The epitaxial temperture was found about 150°C higher under the highest deposition rate than the lowest rate. The result was in accordance with the theory proposed by Walton. In the second part of the experiment, in which air- and vacuum-cleaved surfaces were used as substrates, the residual gas in the evaporation chamber was specified to N 2 , O 2 and H 2 O of about 10 -5 Torr. It was concluded that the epitaxial temperature was influenced only by partial pressure of water vapour, P H 2 O . By the combination of the above two results and the results obtained by Ino et al. in ultra high vacua, it is infered on empirical base that the epitaxial temperature depends upon the ratio P H 2 O / r .
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