Electron microscope study of dislocations introduced by deformation in a Si between 77 and 873 K

Abstract

Dislocations were introduced into Si by scratching between 77 and 873 K. The nature and configurations of dislocations were determined by the weak-beam method. Dislocations introduced below 703 K were perfect dislocations of the shuffle set, while those introduced above 823 K were dissociated dislocations of the glide set. At 77 K, the shuffle set of dislocations was very straight; between RT and 363 K, the shuffle set of dislocations blunted, but mostly parallel to crystallographic orientations. Above 383 K, the shuffle set of dislocations was heavily zigzagged. The mechanism responsible for the zigzagging of the shuffle set of dislocations was discussed.