Abstract
The influence of subthreshold-energy electrons on the formation and annealing of structural defects in ZnTe and on the annealing of dislocation loops preinjected in the sample by bombardment with argon ions is investigated by transmission electron microscopy. The final form and density of structural defects formed after electron irradiation is observed to depend on the total electron flux, whereas the rate of formation of defects and annealing of dislocation loops increases linearly with the intensity of electron irradiation. A comparison is drawn with CdZnTe, Si, and GaAs irradiated under similar conditions. The results are attributed to subthreshold defect nucleation mechanisms.
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