Abstract
Electron mean free path (MFP) was determined by the angular resolved photoemission in 10-40 eV energy range for GaAs(100)-c(4 x 4) by the overlayer method. The investigation was based on the attenuation of the normal photoemission intensity of the Al 2p line from the molecular-beam-epitaxy grown GaAlAs layer buried four monolayers of GaAs below the surface. The energy dependence of the MFP shows a pronounced maximum at about 30 eV which is related to the corresponding section of the electron band structure of GaAs(100). (C) 2004 Elsevier B.V. All rights reserved.
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