Electron magnetotransport in uniaxially stressed Si(100) inversion layers

Abstract

The transverse conductivity sigma xx' of uniaxially stressed Si(100) inversion layers has been measured at T=0.36 K. The initial application of uniaxial stress leads to an increase in valley splitting and a reduction of conductivity maxima. At high stresses, on the other hand, conductivity peaks were observed to increase and to merge with increasing stress. At intermediate stresses, the conductivity peak movements can be explained by assuming the presence of a subband-subband electron exchange interaction.