Abstract
Using optical nuclear polarization (ONP) and nuclear magnetic resonance (NMR) techniques the silicon single crystal solid solutions containing impurity defects of a few rather than one kind have been studied. Application of the ONP techniques to the investigation of nonuniformly doped silicon has been demonstrated. The concentrations and energy fluctuations of donor levels have been determined in silicon doped with elements of III–V and transition groups. Solid solution decay processes have been studied by ONP techniques in silicon crystals doped with deep level impurities. Finally, ONP techniques have been applied to the investigations of semimagnetic semiconductors.
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