Abstract
The authors present a numerical study of localization properties on models for amorphous solids in three dimensions. Tight-binding Hamiltonians that are based on the diamond structure are used to describe the electronic structure of amorphous modifications of carbon, silicon and germanium. The localization behaviour of electronic states is calculated by studying the sensitivity of eigenvalues to a change in boundary conditions. A wide spectrum of localization effects can be observed, including electron localization both at the band edges and weak localization within the bands. The origin of electron localization is discussed using a population analysis of eigenfunctions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
