Abstract
Abstract : This study analyzed two Liquid Phase Epitaxy (LPE) grown AlGa1-xAS samples. One sample was electron irradiated with 1MeV electrons, the other sample was non-irradiated. The goal of this study was to see the effect of the electron irradiation and characterize any trapping states encountered. Deep Level Transient Spectroscopy (DLTS) was used to analyze the samples. Only one was encountered in the non-irradiated sample, the so called DX center 1, while eight states were found in the irradiated smaple, including the DX center. From a discussion of the experimental results, it is concluded that the electron irradiation had no noticeable effect on the DX center, that the irradiation was responsible for the additional trapping states encountered in the irradiated sample, point defect modeling is accurate in characterizing the five of the seven irradiation-induced states. A summary of the DLTS trap parameters is given. Keywords: Semiconductors, Aluminum gallium arsenides.
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