Abstract
Abstract Infrared optical reflectivity measurement techniques are applied to determine the carrier removal rate, mobility changes, and annealing characteristics of heavily doped n-type silicon or tellurium-doped gallium arsenide. 1 MeV room temperature electron irradiation reduces both the carrier concentration and the mobility. Removal rates for GaAs: Te and GaAs:Si having initial carrier concentrations of 6 × 1018 cm−3 are approximately 3.4 and 3.0 cm−1 respectively. The mobility degrades exponentially as a function of fluence. Isochronal anneal experiments show one major recovery stage between 170 and 230°C, and the results are in reasonable agreement with previous data obtained by electric measurements on more lightly doped n-type GaAs.
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