Abstract
The effect of 18 MeV electron irradiation on the optoelectronic and structural properties of a-Si:H films has been studied. It has been established that the irradiation leads to a strong decrease of photo- and dark conductivities, causes a change in the state distribution of the valence band-tail, as well as in the recombination mechanism of the photoexcited carriers. The structural properties of the films have been studied by means of Raman spectroscopy. The observed change in the short and medium-range order of the amorphous silicon network suggests that the high-energy electron irradiation induces structural defects, as well.
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