Electron irradiation for adjusting the reverse recovery time and forward voltage drop characteristics of fast diodes

Abstract

The electron linear accelerator ALIN-10 has been used to irradiate at room temperature and high temperature silicon diodes type BA159, BAX157 and 6DRR1 (manufacturer – Baneasa S.A.-factory 2300, Romania). The influence of 10 MeV electron irradiation upon the main electrical characteristics (reverse recovery time, forward voltage, reverse current) has been examined for different absorbed doses (10–50 kGy) and different irradiation temperatures (25°C, 175°C, 250°C). The dependence of the minority carrier lifetime, reverse recovery time and forward voltage on the radiation dose, and the percentage distribution (%) of the reverse recovery time and of the reverse current for the irradiated diodes are presented. A comparison between the electrical performances of the fast diodes obtained by electron irradiation and the electrical performances of the fast diodes obtained by gold or platinum diffusion has been made.