Abstract
Infrared absorption measurements of electron-irradiated GaAs grown by the liquid-encapsulated Czochralski technique were used to study the electron irradiation effects on the EL2 defect. Based on the photoquenching and thermal recovery signatures, the quenchable component of the ir absorption spectra is attributed to the EL2 defect. It is found that EL2 is unaffected by 2.1-MeV electron irradiation up to the maximum dose used in the present study. It is proposed that the fluctuation of the EL2 concentration in samples exposed to different irradiation levels is primarily due to the compensation mechanism rather than the dissociation of the EL2 complex.
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