Abstract
In this article, we present a study of electron irradiation effect on $\alpha $ -In2Se3-based transistors for near-infrared photodetection. The dark current ( $I_{\mathrm {dark}}$ ), photocurrent $(I_{\mathrm {ph}})$ , responsivity ( $R$ ), external quantum efficiency (EQE), and specific detectivity ( $D\ast$ ) of the photodetector have been investigated systematically after the irradiation. The defects induced by electron irradiation and the $\alpha $ -In2Se3/air interface modified by the physical adsorption and chemical reaction have an important impact on the time annealing process. Compared with the parameters before irradiation, $R$ and $D\ast $ for a wavelength of 1064 nm have been increased by 46.24% and 53.08%, respectively, when the optical power intensity is $81.5~\mu \text{W}$ /cm2. Our results show that $\alpha $ -In2Se3-based photodetectors have a potential application in the aerospace and nuclear industries.
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