Year-end Sale % OFF 
Abstract
Negative dilatation (shrinkage) induced by 10-keV electron bombardment of SiO2 films thermally grown on Si has been studied. Measured deflection changes in continuous SiO2 bridges etched following irradiation showed a maximum shrinkage of [inverted lazy s] 0.8%, which occurred at 0.2 C/cm2, followed by a slight expansion, and subsequent saturation at higher exposures. Exposures up to 3 C/cm2 were utilized. Isochronal annealing studies show the activation energy for recovery to be approximately 1 eV with 2% recovery occurring in 1 h at 400°C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
