Abstract
In this paper it is shown that InP solar cell is more radiation-resistant than Si and GaAs solar cells. 1 MeV electron irradiation damages in InP solar cells with AM 1.5 conversion efficiencies exceeding 16.5% are examined. Minority carrier diffusion length and carrier concentration studies for defects induced by 1 MeV electron irradiation in InP solar cells are carried out, and the correlation between the measured defect parameters and the performance characteristics of the electron-irradiated InP solar cells are elucidated. InP solar cells with higher carrier concentration substrate are found to be more radiation resistant, which is due to the superior radiation-resistance for the high carrier concentration InP substrate.
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