Abstract
The aim of this work is to monitor changes of the N–K electron energy-loss near-edge structure (ELNES) of chromium nitride layers (CrN) introduced by electron irradiation in a transmission electron microscope (TEM). These changes are different for each sample material and seem to give an indication for a particular composition. The CrN samples (CrN and Cr0.47N0.53) were prepared on silicon wafers by reactive magnetron sputtering of a metallic chromium target in nitrogen plasma. In addition, a CrON sample (Cr0.5O0.2N0.3) was also investigated. This sample was prepared by the addition of oxygen to the plasma during film deposition. The ELNES of the N–K ionization edge of stoichiometric CrN shows a typical fine structure (peaks at 399.0 and 401.1eV) and remains nearly unaffected even after high-current-density irradiation. On the other hand the N–K fine structures of Cr0.47N0.53 and Cr0.5O0.2N0.3 show a change of the ELNES with irradiation dose. This presumably arises from a 1s–π*-transition of molecular nitrogen located at interstitial positions in these samples.
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