Electron interaction and ‘memory’ effects in the presence of mixed disorder

Abstract

We have studied the effect of electron–electron interaction in the presence of mixed disorder on the conductivity and Hall effect of a high-mobility two-dimensional electron gas in a GaAs/AlGaAs heterostructure. A parabolic, negative, temperature-dependent magnetoresistance (MR) and temperature-dependent Hall effect are observed. We show that these effects can be explained in terms of the interaction theory. In addition, a temperature independent, positive MR is observed. This classical MR is also shown to be a consequence of the mixed disorder.