Abstract
In nanoscale devices, electron transport tends to become ballistic. Then, the current and the noise are mainly determined by the injection process. An electron injection model suitable for the semi-classical Monte Carlo (or time-dependent quantum) simulation of nanoscale devices with (or without electron) confinement is presented. While the injection model is conceptually quite similar to the boundary conditions used in the Landauer formalism, its mathematical description is quite different because it is developed for time-dependent scenarios. As an application, numerical data show that the signal-to-noise ratio and the bit-error probability are degraded in nanoscale transistors because of electron confinement.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.