Abstract
The desorption and dissociation of ammonia adsorbed on (GaAs(100) occurs readily upon activation with 50 eV electrons. Complementary results from temperature programmed desorption and X-ray photoelectron spectroscopy indicate that the cross-sections for parent desorption and for dissociation to NH x (= 1, 2) are similar (10 −16−10 −17 cm 2), whereas that for nitride production is two orders of magnitude smaller. All these are more than an order of magnitude higher than observed in analogous photon-driven reactions.
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