Electron impact ionization of silicon and germanium atom

Abstract

Theoretical studies of electron impact single ionization cross sections of Si and Ge atoms have been performed in the binary encounter approximation (BEA) including exchange and interference as given by Vriens and the Hartree-Fock (HF) velocity distributions for the target electrons have been used throughout the calculations. The present results of single ionization cross sections are in good agreement with the experimental observations.