Electron impact excitation rates for fine-structure transitions in NE V and SI IX - an R-matrix approach

Abstract

view Abstract Citations (30) References (29) Co-Reads Similar Papers Volume Content Graphics Metrics Export Citation NASA/ADS Electron impact excitation rates for fine-structure transitions in NE V and SI IX - an R-matrix approach Aggarwal, K. M. Abstract Collision strengths for electron impact excitation of fine-structure transitions in Ne V and Si IX have been calculated in a wide energy range using the R-matrix method. Configuration interaction wave functions have been employed in the calculations, and all partial waves with L ≤ 9 have been included. The collision strengths show a complicated resonance structure in the threshold energy region for almost all the transitions. The entire collision strength spectrum has been averaged over a Maxwellian distribution of electron velocities, and the results so obtained have been tabulated at temperatures below 1×106K for Ne V and below 2.5×106K for Si IX. Publication: The Astrophysical Journal Supplement Series Pub Date: January 1984 DOI: 10.1086/190916 Bibcode: 1984ApJS...54....1A Keywords: Atomic Excitations; Electron Impact; Electron Transitions; Fine Structure; Neon; Silicon; Solar Atmosphere; Atomic Collisions; Chromosphere; Configuration Interaction; Electron Energy; Forbidden Transitions; Solar Corona; Space Plasmas; Tables (Data); Atomic and Molecular Physics full text sources ADS |