Electron-impact cross sections ofSiH2using theR-matrix method at low energy

Abstract

The electron-impact collision cross sections are calculated for a ${\text{SiH}}_{2}$ molecule using the $R$-matrix approach in the low-energy range. The elastic and electron-excited inelastic cross sections are calculated in the correlated and uncorrelated approximations. All electronic states arising due to single-electron transitions from Hartree-Fock configurations up to threshold are considered in the target wave-function expansion. Partial waves up to $l=4$ are used to represent continuum electron orbitals. The Born corrected converged cross sections are obtained for the radical with a nonzero dipole moment by considering the contributions of higher partial waves $(l>4)$. The effect of a small dipole moment on cross sections is analyzed. Besides determining the cross sections, the role of active space in the target and scattering problem, including the resonances is discussed. This work reports elastic, inelastic, and differential cross sections and few-electron-collision energy-transfer parameters. In particular, we show the viscosity cross sections and rate coefficients for elastic and electron-excited processes.