Abstract
Focused ion beam (FIB) machining allowed a sub-micron trench to be cut through tin-doped indium oxide (ITO) film on glass to give a generator – collector junction electrode with narrow gap (ca. 600 nm). A layer-by-layer deposited film composed of a dinuclear ruthenium(II)-bis(benzimidazolyl)pyridine-phosphonate (as the negative component) and nanoparticulate TiO 2 (ca. 6 nm diameter, as the positive component) was formed and investigated first on simple ITO electrodes and then on ITO junction electrodes. The charge transport within this film due to Ru(II/III) redox switching (electron hopping) was investigated and an apparent diffusion coefficient of ca. D app = 2 (± 1) × 10 −15 m 2 s −1 was observed with minimal contributions from intra-molecular Ru–Ru interactions. The benefits of FIB-cut ITO junctions as a tool in determining charge hopping rates are highlighted.
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