Abstract
We obtained a measure for τR, the electron-hole recombination time in bismuth, from 2–20°K. The value of τR at 4.8°K is 6 × 10 −9 sec and decreases exponentially as the temperature increases with an activation energy of 42°K. The results were obtained from measurements of the Acoustomagnetoelectric effect (AME) at 11.3 and 29.5 Mc. An ancillary result is a T −2 dependence for the trigonal hole mobility above 8°K.
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