Abstract
Studies of electron-hole liquid (EHL) condensation in Si, in several strained Si systems, in strained Ge, and in GaP are reported, and they provide the most extensive results to date for the systematic variations with band structure of the ground state and critical properties of EHL. The ground state densities of these systems vary by a factor ∼103 and the critical temperatures by a factor ∼20. Investigations of Si with varying magnitudes of uniaxial strains provide the first systematic data for systems with significant band non-parabolicities. Based on these results proposals for scaling relations between the ground state properties and the critical points are tested, and a recently proposed set is verified in quantitative detail.
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