Abstract
Far infrared magneto-optical measurements have been performed on a series of InAs single quantum wells (11–30 nm) clad with thick GaSb layers where either GaAs-like or InSb-like bonds are formed at the heterointerfaces. The rich absorption spectra are found to have both `interband' and ‘intraband’ (electron and hole cyclotron resonance) characteristics. From these results, thek= 0 subband energy gap has been determined and electron and hole effective masses estimated as functions of interface bond type and InAs well width. The electron–hole hybridization has subtle effects on the data and suggests a small hybridized energy.
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