Electron, hole and exciton binding energies on interface defects of single quantum well structures

Abstract

We report on variational calculations of binding energies of electrons, holes and excitons on quantum well interface defects. The defects are modelled by cylindrical protrusions of the well-acting material into the barrier-acting one. We have also examined the effect of adding an attractive coulombic potential to either an attractive or a repulsive interface defect.