Abstract
We present experimental results on hot-carrier phenomena in a GaAs/AlGaAs two-dimensional electron system in the integer and fractional quantum Hall regions. In the integer region at low magnetic fields, a relationship Te ∼ I between the effective carrier temperature Te and the source-drain current I is obtained from Shubnikov-de Haas (SdH) oscillations at several magnetic fields, 0.2 ∼ 0.5 T, and currents, 0.1 ∼ 4 μA. These results are in agreement with results obtained in the current-dependent broadening of resistance peaks in the quantum Hall region of spin-split Landau levels. However, in the fractional region for the filling factor ν = 5/3(B = 7 T), a power law relationship Te ∼ I is obtained. The difference in exponent may be due to different energy relaxation mechanisms between these two regions.
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