Abstract
We study molecular beam epitaxial growth on the unusual (110) surface of GaAs substrates as prerequisite for cleaved edge overgrown structures. We present the first systematic comparison of the quality of two dimensional electron systems on simultaneously overgrown (110) GaAs monitor wafers with ex situ as well as in situ cleaved (110) facets. Our study confirms that characterization of the monitor wafer is a valid benchmark for the magnetotransport characteristics of structures grown on cleaved facets. We show that deviating results can be traced back to (110) substrates of lower quality. We also demonstrate that the roughness of the in situ cleaved facets is decisive for the quality of the induced electron gas.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
