Abstract
We report studies of {varvec{k}}-dependent Landé g-factor, performed by both continuous media approximation {varvec{k}}{varvec{cdot }}{varvec{p}} method, and atomistic tight-binding hbox {sp}^3hbox {d}^5hbox {s}^* approach. We propose an effective, mesoscopic model for InAs that we are able to successfully compare with atomistic calculations, for both very small and very large nanostructures, with a number of atoms reaching over 60 million. Finally, for nanostructure dimensions corresponding to near-zero g-factor we report electron spin states anti-crossing as a function of system size, despite no shape-anisotropy nor strain effects included, and merely due to breaking of atomistic symmetry of cation/anion planes constituting the system.
Highlights
We report studies of k-dependent Landé g-factor, performed by both continuous media approximation k·p method, and atomistic tight-binding sp3d5s∗ approach
We compare this model with k·p and atomistic tight-binding results, by calculating a size-dependence of g-factor for a cubic indium arsenide (InAs) nanostructure with a size varying from a single lattice constant up to over 120 nm leading to challenging multi-million atom simulations
Computationally cost-effective model based on the g(k), gives size-dependent g-factor values inter-mediating between results of atomistic tight-binding and k·p method based on the continuous media approximation
Summary
We report studies of k-dependent Landé g-factor, performed by both continuous media approximation k·p method, and atomistic tight-binding sp3d5s∗ approach. We calculate the k-dependent effective g-factors ( g(k) ) for conduction band (CB) states in bulk InAs and demonstrate a relatively good agreement between the methods.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
