Abstract
We have fabricated a diode with a multiple stacked Si-QDs structure and a single layer graphene top electrode, and studied their electron field emission properties. Electron emission current from the diode was observed by the application of forward biases of 6.0 V and over, which is ~1.0 V lower than that from a diode with a Au top electrode. In addition, we found that electron emission efficiency was increased by a factor of ~ 100 by replacing the top electrode from Au to graphene. This result is explained by the reduction of electron scattering at the top electrode. The results lead to the development of high efficiency planar-type electron emission devices.
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