Electron energy-loss spectroscopy in transmission of undoped and doped diamond films

Abstract

We have prepared thin diamond films by microwave assisted plasma chemical vapour deposition (MWCVD) and hot filament chemical vapour deposition (HFCVD). Diamond powder pre-treatment of the silicon substrates or bias potential were used for nucleation enhancement. Doping of the films was carried out in two ways: in-situ during the CVD process or after the deposition by ion implantation. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) have been applied to characterize the morphology and texture. Electron energy-loss spectroscopy in transmission was then used to investigate the electronic structure of the diamond films as a function of the preparation parameters and the doping level.