Electron energy-loss spectroscopy study of thin film hafnium aluminates for novel gate dielectrics.

Abstract

We have used conventional high-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) in scanning transmission electron microscopy to investigate the microstructure and electronic structure of hafnia-based thin films doped with small amounts (6.8 at.%) of Al grown on (001) Si. The as-deposited film is amorphous with a very thin (approximately 0.5 nm) interfacial SiOx layer. The film partially crystallizes after annealing at 700 degrees C and the interfacial SiO2-like layer increases in thickness by oxygen diffusion through the Hf-aluminate layer and oxidation of the silicon substrate. Oxygen K-edge EELS fine-structures are analysed for both films and interpreted in the context of the films' microstructure. We also discuss valence electron energy-loss spectra of these ultrathin films.