Abstract
In this paper, the behaviors of Indium overlayers on Si(111)7 × 7 and Si(100)2 × 1 surfaces have been investigated by low energy electron diffraction, electron energy loss spectroscopy, and auger electron spectroscopy. The behaviors of Indium overlayers on Si(111) and Si(100) surfaces are different. At room temperature, an intermixed interfacial phase was formed during Indium adsorption on Si(111) surface, but Indium was not intermixed with Si substrate on Si(100) surface. At the temperature of ∼550 °C and In coverage > 0.5 monolayer, the Si(100) surface could be completely faceted to {310} facets by Indium.
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