Abstract
Abstract Silicon-rich silicon oxide (SRSO) film was prepared through the deposition of SiOx film by radio-frequency reactive magnetron sputtering from a Si target and the subsequent rapid thermal annealing treatment of SiOx film, and planar-type field emission cathodes based on SRSO film were fabricated. The surface morphologies and electron emission properties of the SRSO films deposited under different O2/Ar flow ratios were investigated. The experimental results show that a relatively high O2/Ar flow ratio during the deposition of SiOx film can lead to the formation of cluster structure in the SRSO film prepared, and the electron emission efficiency of SRSO film rises with the increase of electric field applied. An SRSO-film cathode fabricated under an O2/Ar flow ratio of 1:1 with a chamber pressure of 0.21 Pa has an emission current density of 65.61 μA/cm2 and a corresponding emission efficiency of 0.53% at a bias voltage of 18 V, and it exhibits relatively stable emission and fine emission uniformity.
Highlights
Field emission cathodes have been widely applied in a variety of vacuum electronic devices, such as electron guns[1,2], ion sources[3,4], X-ray sources[5,6], microwave power sources[7,8], parallel e-beam lithography systems[9] and flat panel displays[10,11]
The clusters consisting of a lot of tiny nanoparticles in the samples C and D mainly have a diameter of 20∼60 nm. This experimental result indicates that a relatively high O2/Ar flow ratio during the deposition process of SiOx film can lead to the formation of cluster structure in the Silicon-rich silicon oxide (SRSO) films prepared
To explore the preparation and performance of a kind of Si-based thin-film field-emission cathode, the cathodes based on SRSO film were prepared by radio-frequency reactive magnetron sputtering deposition and subsequent rapid thermal annealing of SiOx film, and their electron emission properties were investigated
Summary
Field emission cathodes have been widely applied in a variety of vacuum electronic devices, such as electron guns[1,2], ion sources[3,4], X-ray sources[5,6], microwave power sources[7,8], parallel e-beam lithography systems[9] and flat panel displays[10,11]. Among various planar-type field emission cathodes, the cathodes based on silicon-rich silicon oxide (SRSO) film are currently one of the attractive cathodes due to the simple dry process, full compatibility with mature semiconductor integrated circuit technology and easy realization of Si-based electronic devices. The emission efficiency of field emission cathodes based on Si quantum dots formed by very-high-frequency plasma enhanced chemical. For SRSO-film cathodes, the intensive study on their preparation technique, microstructure and emission properties are still deficient so far, which becomes a limiting factor in the further performance improvement and practical application. The surface morphologies and electron emission properties of the as-prepared SRSO films were investigated, and the emission stability and uniformity of the corresponding cathodes were evaluated
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