Abstract
In this paper, we report a simple analytical model for carbon nanotube (CNT) based electron emitters and triode field emission devices on silicon substrates. Carbon nano-tubes have been grown in a direct current plasma enhanced chemical vapour deposition (dc PECVD) reactor from Ni catalyst islands. CNTs are electrically isolated by a TiO2 film and a chromium layer acts as the metal gate. The effects of the surrounding gate as well as the current–voltage behavior are investigated. To verify the experimental results of this structure a theoretical model is developed, using the Fowler–Nordheim tunneling effect combined with the electrodynamics theory. With certain simplifying assumptions, we replace the complex structure of triode devices with a simple structure which arrives at a closed formulation to predict field emission properties. Field enhancement factor is an important factor that depends on the CNT shape, gate opening and the applied voltage. In our fabrication process, the gate opening diameter can be of the order of the CNT diameter. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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