Abstract
Electron emission from both the hydrogenated and the oxidized boron-doped heteroepitaxial diamond with smooth surface is studied in order to understand the effect of adsorption on electron emission. B-doped heteroepitaxial diamond is grown on iridium (Ir) by direct current plasma chemical vapor deposition (CVD). A relatively smooth surface is obtained. The Cls peaks in X-ray photoelectron spectroscopy (XPS) for the hydrogenated and oxidized diamond surfaces are 284.1 and 285.6 eV, respectively. The threshold voltage of the hydrogenated diamond surface in the electron emission is lower than that of the oxidized diamond surface. The emission barrier height ratio of the hydrogenated diamond surface to the oxidized diamond surface is estimated to be 2.6 from the slopes of Fowler–Nordheim (F–N) plots. The change in the emission properties might be examined by the surface dipole formed on diamond surface from the XPS results and the F–N plots.
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