Abstract
The measurement of electron emission from the cross-sectional surface of porous Si layer on a glass substrate is demonstrated. The porous Si is formed by anodization, and subsequently bonded on a glass substrate with an Al electrode by anodic bonding. The electron emission device structure is composed of a Au electrode, a porous Si layer, and a glass substrate with an Al electrode. This structure is cut into two pieces during the formation of the cross-sectional surface of porous Si. The measurement of electron emission is carried out using a diode configuration in a vacuum chamber. A collector is placed close to the cross-sectional surface of porous Si. The negative voltages are applied at the Au electrode and electron emission from the cross-sectional surface of porous Si layer occurs. The characteristics of emission current are measured using the variation of applied negative voltage, the stability of electron emission, and the change in location of the Au electrode at the edge of the cross section of porous Si layer.
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