Abstract

ABSTRACTNew observations are presented on the emission of electrons from n-type polycrystalline diamond and n-type boron nitride (BN) cold cathode films, both as synthesized and after post-synthesis annealing. The films have been observed to show an increase in electron emission after annealing by one to several orders of magnitude, depending upon the type of emitter and the specific surface treatment. Observations from both plasma and laser annealing treatments will be presented.The annealed BN cold cathodes have been observed to yield stable emission currents as high as 2 A cm−2 (∼4 mA total current) at fields as low as ∼30 V μm−1. This is believed to be the highest reported current density yet observed from a planar film cold cathode emitter.

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